US Patent Issued to GlobalFoundries U.S. on Feb. 17 for "Semiconductor device including gate with different laterally adjacent sections and method" (German Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,330, issued on Feb. 17, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Semiconductor device including gate with different laterally adjacent sections and method" was invented by Thomas Melde (Dresden, Germany), Ralf Richter (Dresden, Germany) and Stefan Dunkel (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are embodiments of a semiconductor device and method of forming the device. The device includes a gate with first and second sections on a semiconductor layer. The first section includes first gate dielectric and gate conductor layers and an optional additional gate conductor layer on the first gate conductor...