ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,384, issued on Feb. 10, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).
"Memory devices" was invented by Anupam Dutta (Krishnapur, India) and Partha S. Gupta (Dhakuria, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to memory devices and methods of manufacture. The structure includes: a gate structure having a gate dielectric material and a gate body; a body region under the gate dielectric material; a first doped region laterally adjacent to a first side of the body region; a second doped region laterally adjacent to the first doped region; and a shall...