ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,410, issued on Feb. 10, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).
"High electron mobility transistors" was invented by Johnatan A. Kantarovsky (South Burlington, Vt.), Rebouh Benelbar (Murphy, Texas), Ajay Raman (Essex Junction, Vt.), Michel J. Abou-Khalil (Essex-Junction, Vt.), Rajendran Krishnasamy (Essex Junction, Vt.) and Randy L Wolf (Essex Junction, Vt.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to high-electron-mobility transistors and methods of manufacture. A structure includes: a semiconductor layer on a semiconductor material; a gate stru...