ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,575, issued on Dec. 9, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).
"Multi-channel replacement metal gate device" was invented by Haiting Wang (Clifton Park, N.Y.), Hong Yu (Clifton Park, N.Y.) and Zhenyu Hu (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a multi-channel replacement metal gate device and methods of manufacture. The structure includes: a fully depleted semiconductor on insulator substrate; a plurality of fin structures over the fully depleted semiconductor on insulator substrate; and a metal gate structure spanning over...