ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,610, issued on Dec. 9, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Monolithic integration of diverse device types with shared electrical isolation" was invented by Francois Hebert (San Mateo, Calif.) and Handoko Linewih (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures including III-V compound semiconductor-based devices and silicon-based devices integrated on a semiconductor substrate and methods of forming such structures. The structure includes a substrate having a device layer, a handle substrate, and a buried insulator layer between the handle substrate and the device layer. The structure includes a first semicon...