ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,623, issued on Dec. 9, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).
"Lateral phototransistor" was invented by Alexander M. Derrickson (Saratoga Springs, N.Y.), Uppili S. Raghunathan (Essex Junction, Vt.), Vibhor Jain (Williston, Vt.), Yusheng Bian (Ballston Lake, N.Y.) and Judson R. Holt (Ballston Lake, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar...