US Patent Issued to GlobalFoundries U.S. on Dec. 30 for "Substrates of semiconductor devices having varying thicknesses of semiconductor layers" (New York, Idaho, Texas Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,995, issued on Dec. 30, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Substrates of semiconductor devices having varying thicknesses of semiconductor layers" was invented by David Pritchard (Malta, N.Y.), Hongru Ren (Boise, Idaho), Shafiullah Syed (Murphy, Texas), Hong Yu (Clifton Park, N.Y.), Man Gu (Malta, N.Y.) and Jianwei Peng (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate is provided. The substrate includes a base, a semiconductor layer over the base, and an insulator layer between the base and the semiconductor layer. The semiconductor layer has a first semiconductor layer portion having a first thic...