US Patent Issued to GLOBALFOUNDRIES U.S. on Dec. 23 for "Vertically integrated SCR structure with SOI-based raised trigger element" (Vermont Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,486, issued on Dec. 23, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Vertically integrated SCR structure with SOI-based raised trigger element" was invented by Anindya Nath (Essex Junction, Vt.), Alain F. Loiseau (Williston, Vt.) and Souvick Mitra (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a structure including a trigger element within a semiconductor-on-insulator (SOI) substrate, and a silicon controlled rectifier (SCR) under a buried insulator layer of the SOI substrate. The trigger element is between an anode and a cathode of the SCR."

The patent was filed on Sept. 15, 2022,...