US Patent Issued to GlobalFoundries U.S. on Dec. 23 for "Metal oxide semiconductor devices and methods of making thereof" (New York Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,434, issued on Dec. 23, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Metal oxide semiconductor devices and methods of making thereof" was invented by Shesh Mani Pandey (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a semiconductor layer over an insulator layer and a base layer under the insulator layer. A drain region comprises a well in the base layer, a doped region above and coupled with the well, a first drift region above and coupled with the first region, and a second drift region above the first doped region. The first doped region is at least partially in the insulator lay...