US Patent Issued to GlobalFoundries U.S. on Dec. 16 for "Memory device structures that include a capacitor" (American, Indian Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,624, issued on Dec. 16, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Memory device structures that include a capacitor" was invented by David Pritchard (Glenville, N.Y.), Brenda Lanza (Austin, Texas), Galla Kiran Kumar (Ongole, India), Romain Feuillette (Williston, Vt.), Navneet Jain (Milpitas, Calif.), Hong Yu (Clifton Park, N.Y.) and Heather Lazar (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a memory device and methods of forming a structure for a memory device. The structure comprises a first transistor including a first gate structure and a first source/drain region, a second transistor inclu...