US Patent Issued to GlobalFoundries U.S. on Aug. 5 for "Liner-free through-silicon-vias formed by selective metal deposition" (Vermont Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,129, issued on Aug. 5, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Liner-free through-silicon-vias formed by selective metal deposition" was invented by David Thomas (Richmond, Vt.), Cody Soule (Burlington, Vt.), John G. Twombly (Fairfax, Vt.), Michael Brigham (Bolton, Vt.), Bruce Porth (Jericho, Vt.) and Vivekanand Kalaparthi (Burlington, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a through-silicon via and methods of forming a structure for a through-silicon via. The structure includes a substrate having a trench and surfaces that border the trench. The structure further includes a through-silicon via having a la...