US Patent Issued to GlobalFoundries U.S. on Aug. 26 for "High-mobility-electron transistors having heat dissipating structures" (Vermont Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,927, issued on Aug. 26, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"High-mobility-electron transistors having heat dissipating structures" was invented by Zhong-Xiang He (Essex Junction, Vt.), Ramsey Hazbun (Colchester, Vt.), Rajendran Krishnasamy (Essex Junction, Vt.), Johnatan Avraham Kantarovsky (South Burlington, Vt.), Michel Abou-Khalil (Essex Junction, Vt.) and Richard Rassel (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the...