ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,616, issued on Aug. 12, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).
"Transistors with multiple silicide layers" was invented by Man Gu (Malta, N.Y.), Hong Yu (Clifton Park, N.Y.), Jianwei Peng (Clifton Park, N.Y.) and Haiting Wang (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a transistor and methods of forming a structure for a transistor. The structure includes a first dielectric spacer, a second dielectric spacer, and a gate laterally between the first dielectric spacer and the second dielectric spacer. The gate includes a first silicide layer extending from the first dielectric spacer to the secon...