ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,627, issued on Aug. 12, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Silicon germanium fins and integration methods" was invented by Hong Yu (Clifton Park, N.Y.), Haiting Wang (Clifton Park, N.Y.) and Zhenyu Hu (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure is provided, the structure comprising a substrate and a first silicon germanium fin over the substrate. A first silicon germanium layer may be arranged in the substrate, whereby the first silicon germanium layer may be coupled to the first silicon germanium fin. A second silicon germanium layer may be arranged in the substrate, whereby the second silic...