ALEXANDRIA, Va., June 6 -- United States Patent no. 12,281,996, issued on April 22, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Semiconductor structure including photodiode-based fluid sensor and methods" was invented by Siva P. Adusumilli (South Burlington, Vt.), Mark D. Levy (Williston, Vt.), Ramsey M. Hazbun (Colchester, Vt.) and John J. Ellis-Monaghan (Grand Isle, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor structure with a photodiode including: a well region with a first-type conductivity in a substrate, a trench in the well region, and multiple conformal semiconductor layers in the trench. The semiconductor layers include a first semiconductor layer, wh...