ALEXANDRIA, Va., June 5 -- United States Patent no. 12,276,831, issued on April 15, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Enlarged multilayer nitride waveguide for photonic integrated circuit" was invented by Shesh Mani Pandey (Saratoga Springs, N.Y.), Yusheng Bian (Ballston Lake, N.Y.) and Ravi Prakash Srivastava (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures and methods implement an enlarged multilayer nitride waveguide. The structure may include an inter-level dielectric (ILD) layer over a substrate. A first enlarged multilayer nitride waveguide is positioned in the ILD layer in a region of the substrate. A second multilayer nitride waveguide may also be ...