US Patent Issued to GLOBALFOUNDRIES U.S. on April 15 for "Bipolar transistor with stepped emitter" (Vermont, Massachusetts Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,269, issued on April 15, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Bipolar transistor with stepped emitter" was invented by Uppili S. Raghunathan (Essex Junction, Vt.), Vibhor Jain (Williston, Vt.), Qizhi Liu (Lexington, Mass.), Yves T. Ngu (Williston, Vt.), Ajay Raman (Essex Junction, Vt.), Rajendran Krishnasamy (Essex Junction, Vt.) and Alvin J. Joseph (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a stepped emitter and methods of manufacture. The structure includes: a collector; a base over the collector; ...