US Patent Issued to GlobalFoundries Singapore on Sept. 30 for "Bi-directional semiconductor-controlled rectifier with dual-level isolation structures and method" (Singaporean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,035, issued on Sept. 30, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Bi-directional semiconductor-controlled rectifier with dual-level isolation structures and method" was invented by Ting Yang (Singapore), Jie Zeng (Singapore) and Kyong Jin Hwang (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor structure including a device (e.g., a bi-directional semiconductor-controlled rectifier, such as a bi-directional silicon-controlled rectifier (BDSCR)) and, within the device, at least two dual-level isolation structures. Each dual-level isolation structure includes a first section at the top surfa...