US Patent Issued to GlobalFoundries Singapore on Nov. 25 for "Resistive random-access memory elements with lateral sidewall switching" (Singaporean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,234, issued on Nov. 25, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Resistive random-access memory elements with lateral sidewall switching" was invented by Kai Kang (Singapore), Curtis Chun-I Hsieh (Singapore), Jianxun Sun (Singapore) and Juan Boon Tan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a resistive random-access memory element and methods of forming a structure for a resistive random-access memory element. The structure comprises an interlayer dielectric layer including a first trench having a sidewall and a second trench having a sidewall adjacent to the sidewall of the first trench. The ...