US Patent Issued to GlobalFoundries Singapore on Nov. 11 for "Electrostatic discharge protection devices with multiple-depth trench isolation" (Singaporean, American Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,385, issued on Nov. 11, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Electrostatic discharge protection devices with multiple-depth trench isolation" was invented by Kyongjin Hwang (Singapore) and Robert Gauthier Jr. (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises a semiconductor substrate including first and second trench isolation regions positioned in the semiconductor substrate. The first trench isolation region extends to a first depth in the semiconductor substrate, and the second trench isolation...