US Patent Issued to GLOBALFOUNDRIES Singapore on March 18 for "Trench isolation structures with varying depths and method of forming the same" (Singaporean Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,200, issued on March 18, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).

"Trench isolation structures with varying depths and method of forming the same" was invented by Yong Wah See (Singapore), Guowei Zhang (Singapore), Ee Jan Khor (Singapore) and Chin Leng Ko (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to trench isolation structures for semiconductor devices. More particularly, the present disclosure relates to semiconductor devices having trench isolation structures with varying depths for electrically isolating integrated circuit (IC) components in the semiconductor device...