US Patent Issued to GLOBALFOUNDRIES Singapore on June 3 for "Memory cells with three-dimensional gate coupling and methods of forming thereof" (Singaporean Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,152, issued on June 3, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).

"Memory cells with three-dimensional gate coupling and methods of forming thereof" was invented by Wei Meng (Singapore), Xin Qu (Singapore), Laiqiang Luo (Singapore), Fangxin Deng (Singapore) and Fan Zhang (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell including a substrate having a first doped region and a second doped region spaced apart from each other and defining a channel region therebetween, a floating gate including a first end over the channel region and a second end over the first doped region, a control gate including a first po...