ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,892, issued on July 15, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Non-volatile memory elements with one-time or multiple-time programmability" was invented by Desmond Jia Jun Loy (Singapore), Eng Huat Toh (Singapore), Sriram Balasubramanian (Singapore) and Shyue Seng Tan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a non-volatile memory and methods of forming such structures. A gate electrode and a gate dielectric layer are formed over an active region with the gate dielectric layer between the gate electrode and the active region. A first doped region is formed in the active region, a second doped...