US Patent Issued to GLOBALFOUNDRIES Singapore on Jan. 27 for "Semiconductor structures for galvanic isolation" (Singaporean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,551, issued on Jan. 27, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).

"Semiconductor structures for galvanic isolation" was invented by Bong Woong Mun (Singapore) and Jeoung Mo Koo (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to semiconductor structures for capacitive isolation, and structures incorporating the same. More particularly, the present disclosure relates to capacitive isolation structures for high voltage applications. The present disclosure also relates to methods of forming structures for capacitive isolation and the structures incorporating the same. The disclose...