US Patent Issued to GLOBALFOUNDRIES SINGAPORE on Jan. 13 for "Structure with upper features of adjacent metal structures with sidewall spacers providing void-free dielectric filling" (Singaporean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,060, issued on Jan. 13, was assigned to GLOBALFOUNDRIES SINGAPORE PTE LTD (Singapore).

"Structure with upper features of adjacent metal structures with sidewall spacers providing void-free dielectric filling" was invented by Abhijit Ghosh (Singapore), Suk Hee Jang (Singapore), Deepthi Kandasamy (Singapore), Young Seon You (Singapore) and Yoke Leng Lim (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a first metal structure including a first upper metal feature having a first sidewall spacer thereabout, and a first lower metal feature under the first upper metal feature. The first lower metal feature includes a sidewall ...