ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,237, issued on Jan. 13, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).
"Electrodes of semiconductor memory devices having corners of acute angles" was invented by Xinshu Cai (Singapore), Shyue Seng Tan (Singapore) and Eng Huat Toh (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to an aspect of the present disclosure, a memory device is provided. The memory device includes a dielectric layer having a top surface, a first electrode having a bottom surface, a switching layer, and a second electrode. The bottom surface of the first electrode is arranged below the top surface of the dielectric layer. The first electr...