US Patent Issued to GlobalFoundries Singapore on Feb. 10 for "Structure for galvanic isolation using dielectric-filled trench in substrate below electrode" (Singaporean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,725, issued on Feb. 10, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Structure for galvanic isolation using dielectric-filled trench in substrate below electrode" was invented by Bong Woong Mun (Singapore) and Jeoung Mo Koo (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a substrate having a frontside and a backside. A first electrode is in a first insulator layer and is adjacent to the frontside of the substrate. The first electrode is part of a redistribution layer (RDL). A second electrode is between the substrate and the first electrode. A dielectric-filled trench in the substrate is under the ...