US Patent Issued to GlobalFoundries Singapore on Feb. 10 for "Structure for capacitor having defect-preventing regions in metal electrode" (Singaporean Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,723, issued on Feb. 10, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Structure for capacitor having defect-preventing regions in metal electrode" was invented by EeJan Khor (Singapore), Ramasamy Chockalingam (Singapore), Juan Boon Tan (Singapore) and Pannirselvam Somasuntharam (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure for a capacitor is provided. The structure includes a first metal electrode, such as a copper electrode, having at least one dielectric region, such as a dielectric, therein. A first dielectric layer is on the first metal electrode, and a second metal electrode is on the first dielectric...