US Patent Issued to GLOBALFOUNDRIES Singapore on Dec. 2 for "Structures for three-terminal memory cells" (Singaporean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,660, issued on Dec. 2, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).

"Structures for three-terminal memory cells" was invented by Desmond Jia Jun Loy (Singapore), Eng Huat Toh (Singapore) and Shyue Seng Tan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed subject matter relates generally to structures for use in memory devices. More particularly, the present disclosure relates to three terminal resistive random-access (ReRAM) memory structures having source, drain, and control electrodes. The present disclosure provides a memory structure including a source electrode having an upper surface, a drain electrode...