US Patent Issued to GlobalFoundries Singapore on Dec. 16 for "Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method" (Singaporean Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,119, issued on Dec. 16, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method" was invented by Wensheng Deng (Singapore), Kemao Lin (Singapore), Curtis Chun-I Hsieh (Singapore), Wanbing Yi (Singapore), Liu Xinfu (Singapore), Rui Tze Toh (Singapore), Yanxia Shao (Singapore), Shucheng Yin (Singapore), Jason Kin Wei Wong (Singapore) and Yung Fu Chong (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor d...