US Patent Issued to GlobalFoundries Singapore on Aug. 12 for "Structures for three-terminal memory cells" (Singaporean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,785, issued on Aug. 12, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Structures for three-terminal memory cells" was invented by Desmond Jia Jun Loy (Singapore), Eng Huat Toh (Singapore) and Shyue Seng Tan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed subject matter relates generally to structures for use in memory devices. More particularly, the present disclosure relates to three terminal resistive random-access (ReRAM) memory structures having source, drain, and control electrodes. The present disclosure provides a memory structure including a source electrode, a drain electrode, a control electrode ...