ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,388,006, issued on Aug. 12, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).
"Capacitor and airgap structure" was invented by Chun-I Hsieh (Singapore), Ee Jan Khor (Singapore), Wei-Hui Hsu (Singapore), Wanbing Yi (Singapore) and Juan Boon Tan (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to capacitor structures and methods of manufacture. The structure includes: an airgap provided within a dielectric material; an insulator material across a top of the airgap and on a surface of the dielectric material; and a capacitor provided within the dielec...