US Patent Issued to GlobalFoundries Singapore on April 29 for "Buffered top thin film resistor, MIM capacitor, and method of forming the same" (Singaporean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,919, issued on April 29, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Buffered top thin film resistor, MIM capacitor, and method of forming the same" was invented by Venkata Mangathayaru Bollam (Singapore), Qiying Wong (Singapore) and Yudi Setiawan (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a dielectric layer over a back end of line (BEOL) metal layer, a metallic resistive layer over the dielectric layer, a resistor comprising a metallic resistive film that is a first portion of the metallic resistive layer, and a metal-insulator-metal (MIM) capacitor. The insulator of the MIM capaci...