US Patent Issued to GLOBALFOUNDRIES Singapore on April 22 for "Memory device having a switching element thicker at a first side than at a second side and method of forming the same" (Singaporean Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,925, issued on April 22, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).

"Memory device having a switching element thicker at a first side than at a second side and method of forming the same" was invented by Ju Dy Lim (Singapore), Mei Zhen Ng (Singapore), Kazutaka Yamane (Singapore) and Chim Seng Seet (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device may be provided, including a first planar electrode, a second planar electrode, and a switching element arranged between the first planar electrode and the second planar electrode to where a first side of the switching element is arranged over the first planar el...