ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,215, issued on March 25, was assigned to GlobalFoundaries U.S. Inc. (Malta, N.Y.).
"Fin on silicon-on-insulator" was invented by Hong Yu (Clifton Park, N.Y.), Haiting Wang (Clifton Park, N.Y.) and Zhenyu Hu (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A structure is provided, the structure may include an active layer arranged over a buried oxide layer, the active layer having a top surface. The top surface of the active layer may have a first portion and a second portion. A barrier stack may be arranged over the first portion of the top surface of the active layer. The barrier stack may include a barrier layer. The second port...