US Patent Issued to Gigajot Technology on Oct. 21 for "Pixel with anti-blooming circuitry formed in shallow trench isolation" (California Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,452,556, issued on Oct. 21, was assigned to Gigajot Technology Inc. (Glendale, Calif.).

"Pixel with anti-blooming circuitry formed in shallow trench isolation" was invented by Jiaju Ma (Monrovia, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pixel of an image sensor may include an anti-blooming (AB) transistor with a gate formed in a shallow trench isolation (STI) of the pixel. The STI is positioned within the horizontal boundaries of the pixel structure. In certain instances, the STI isolates the drain region for a reset transistor of the pixel from a photodiode of the pixel and the AB transistor shares the drain region with the reset transis...