US Patent Issued to GigaDevice Semiconductor on July 1 for "Random access memory and sense-amplifying compensation circuit thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,516, issued on July 1, was assigned to GigaDevice Semiconductor Inc. (Beijing).

"Random access memory and sense-amplifying compensation circuit thereof" was invented by Miao Xie (Beijing) and Shaoxu Jia (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a random access memory and a sense-amplifying (SA) compensation circuit thereof. The SA compensation circuit includes: a SA module, connected between a target bit line and a complementary bit line, and connected to SA voltage lines; an offset cancellation module, connected between the target bit line and the SA module and connected between the complementary bit li...