ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,636, issued on Feb. 10, was assigned to GigaDevice Semiconductor Inc. (Beijing).
"Non-volatile memory and electronic device" was invented by Jianxin Li (Beijing) and Ligang Chen (Beijing).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory, including n dies, where n is an integer greater than 1; at least one die of the n dies respectively receives a CRC operation execution instruction, and determines data to be verified of the at least one die according to the CRC operation execution instruction; for any die of the n dies, the die calculates a CRC code according to the data to be verified of the at least one die, to verify data to be...