US Patent Issued to GeneSic Semiconductor on Sept. 30 for "Manufacture of power MOSFETs" (Virginia Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,949, issued on Sept. 30, was assigned to GeneSic Semiconductor Inc. (Dulles, Va.).

"Manufacture of power MOSFETs" was invented by Siddarth Sundaresan (Dulles, Va.), Ranbir Singh (Dulles, Va.) and Jaehoon Park (Dulles, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment relates to a method obtaining a silicon carbide wafer comprising a first conductivity type substrate and a first conductivity type drift layer, forming a second conductivity type first well region within the first conductivity type drift layer, forming a first conductivity type source region within the second conductivity type first well region, forming a second conducti...