US Patent Issued to GeneSIC Semiconductor on May 13 for "And manufacture of robust, high-performance devices" (Virginia Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,612, issued on May 13, was assigned to GeneSIC Semiconductor Inc. (Dulles, Va.).

"And manufacture of robust, high-performance devices" was invented by Siddarth Sundaresan (Dulles, Va.), Ranbir Singh (Dulles, Va.) and Jaehoon Park (Dulles, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment relates to a device comprising SiC, the device having a p-shield region that is outside a junction gate field-effect transistor region, wherein a doping concentration in a p-well region within a MOSFET channel is non-uniform. Another embodiment relates to a device comprising SiC, the device having a p-shield region, wherein a doping concentration in a...