US Patent Issued to GELEST on July 1 for "Silicon-based thin films from N-alkyl substituted perhydridocyclotrisilazanes" (Pennsylvania, New York Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,344,934, issued on July 1, was assigned to GELEST INC. (Morrisville, Pa.).

"Silicon-based thin films from N-alkyl substituted perhydridocyclotrisilazanes" was invented by Barry C. Arkles (Pipersville, Pa.) and Alain E. Kaloyeros (Slingerlands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted p...