US Patent Issued to GaN Systems on June 17 for "Thermal management solution for power stage comprising top-cooled power semiconductor switching devices" (Canadian Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,148, issued on June 17, was assigned to GaN Systems Inc. (Kanata, Canada).

"Thermal management solution for power stage comprising top-cooled power semiconductor switching devices" was invented by Ruoyu Hou (Kanata, Canada) and Juncheng Lu (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power stage assembly for improved thermal dissipation and EMC for top-cooled semiconductor power switching devices, e.g. high voltage, high current lateral GaN power transistors in embedded die packages. The power switching devices are mounted on a PCB substrate, with electrical connections between a bottom side of each device package and the PCB. Ea...