US Patent Issued to FUZHOU BOE OPTOELECTRONICS TECHNOLOGY, BOE TECHNOLOGY GROUP on March 25 for "Oxide thin film transistor, method for preparing same, and display apparatus" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,225, issued on March 25, was assigned to FUZHOU BOE OPTOELECTRONICS TECHNOLOGY Co. LTD. (Fujian, China) and BOE TECHNOLOGY GROUP Co. LTD. (Beijing).

"Oxide thin film transistor, method for preparing same, and display apparatus" was invented by Bin Lin (Beijing), Zengrong Li (Beijing), Hangle Guo (Beijing), Zhenyou Zou (Beijing), Liangliang Li (Beijing) and Fadian Le (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an oxide thin film transistor, including a gate, a gate insulator, a channel layer, a protective layer, and a source electrode and drain electrode layer that are disposed on a base substrate, wherein the source electrod...