US Patent Issued to Fujitsu on Oct. 7 for "Semiconductor device, method for manufacturing semiconductor device, and electronic device" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,665, issued on Oct. 7, was assigned to Fujitsu Ltd. (Kawasaki, Japan).

"Semiconductor device, method for manufacturing semiconductor device, and electronic device" was invented by Atsushi Yamada (Hiratsuka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a channel layer that includes a first nitride semiconductor that contains Ga; a barrier layer that is provided on a first surface side of the channel layer, and includes a second nitride semiconductor that contains In, Al, and Ga; a source electrode and a drain electrode that are provided on a second surface side of the barrier layer opposite to the channel layer...