US Patent Issued to FUJITSU on July 22 for "Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,345, issued on July 22, was assigned to FUJITSU Ltd. (Kawasaki, Japan).

"Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor device" was invented by Shirou Ozaki (Yamato, Japan), Junji Kotani (Atsugi, Japan), Toshihiro Ohki (Hadano, Japan) and Naoya Okamoto (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A compound semiconductor device includes a carrier supply layer, a channel layer disposed over the carrier supply layer and configured to include InGaAs, and an etching stopper layer disposed over the channel layer, and configured to include a first layer disposed over the channel layer and co...