US Patent Issued to Fujitsu on Aug. 19 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,198, issued on Aug. 19, was assigned to Fujitsu Ltd. (Kawasaki, Japan).

"Semiconductor device" was invented by Atsushi Yamada (Hiratsuka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a channel layer, a barrier layer disposed above the channel layer, a protective layer disposed on the barrier layer, and an insulating layer disposed on the protective layer. A composition of the barrier layer is represented by Inx1Alx2Ga1-x1-x2N, where 0.00greater than=x1greater than=0.20, and 0.10greater than=x2greater than=1.00, and a composition of the protective layer is represented by Iny1Aly2Ga1-y1-y2N, where 0.00greater th...