ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,922, issued on April 22, was assigned to Fujitsu Ltd. (Kawasaki, Japan).
"Manufacturing method for compound semiconductor device" was invented by Kozo Makiyama (Kawasaki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method for a compound semiconductor device, a semiconductor laminate structure, including an electron transit layer and an electron supply layer that are formed from compound semiconductor. A source electrode, a gate electrode, and a drain electrode are provided above the semiconductor laminate structure and arranged in a first direction. A first insulating film having a first internal stress is formed over the sem...