US Patent Issued to FUJIFILM on Sept. 2 for "Photodetector element, manufacturing method for photodetector element, image sensor, dispersion liquid, and semiconductor film" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,404,450, issued on Sept. 2, was assigned to FUJIFILM Corp. (Tokyo).

"Photodetector element, manufacturing method for photodetector element, image sensor, dispersion liquid, and semiconductor film" was invented by Masahiro Takata (Kanagawa, Japan), Masashi Ono (Kanagawa, Japan) and Shunsuke Kitajima (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom."

The patent was filed on Dec. 20, 2021, under Applic...