ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,415,953, issued on Sept. 16, was assigned to FUJIFILM Corp. (Tokyo).
"Photodetector element and image sensor" was invented by Masahiro Takata (Kanagawa, Japan), Masashi Ono (Kanagawa, Japan) and Shunsuke Kitajima (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A photodetector element has a photoelectric conversion layer containing aggregates of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing aggregates of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinate...