US Patent Issued to FUJIFILM on July 1 for "Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device" (Japanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,346,026, issued on July 1, was assigned to FUJIFILM Corp. (Tokyo).

"Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device" was invented by Toshiaki Fukuhara (Shizuoka, Japan), Takeshi Kawabata (Shizuoka, Japan) and Sou Kamimura (Shizuoka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A composition for forming an underlayer film is used for forming an underlayer film under a resist film, the composition including a silicon atom-containing compound and a halogen-based solvent, in which a content of the halogen-based solvent is 1.0 ppb by mass to 50.0 ppm by mass with respect to a total ...